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In chip production, there is a product that plays a vital duty, that is silicon nitride (SiNx). Although it might not receive the exact same attention as other much more well-known semiconductor products such as silicon (Si), gallium arsenide (GaAs) or gallium nitride (GaN), its importance is self-evident. The majority of chips will use this product.
Careful close friends have noticed that I made use of SiNx when composing the chemical formula of silicon nitride. Friends that have actually researched secondary school chemistry ought to recognize that N is the 5th major group aspect. Practically, the valence should be -3, while the chemical valence of silicon is +4. The chemical formula of silicon nitride need to be Si3N4. Just how can it be SiNx?
First, let's speak about the multivalent state of nitrogen: nitrogen has numerous valence states, mainly due to the fact that it has 5 valence electrons, and nitrogen atoms can share these electrons in different methods. Nitrogen can create various valence states, which mainly depend on the number of electrons it shows other components.
For nitrogen, its most steady valence state is -3, such as in ammonia (NH3) and gallium nitride (GaN). Nonetheless, nitrogen can additionally form a favorable valence state by losing electrons, such as the +5 valence state in nitric acid (HNO3). On top of that, nitrogen can also develop a valence state in between -3 and +5, such as the +3 valence state in nitrous acid (HNO2) or the +1 and +2 valence states in some natural compounds.
Secondly, let's discuss silicon nitride:
In the semiconductor market, silicon nitride utilized in various applications is often non-uniform, normally represented by SiNx. SiNx is an amorphous material whose properties depend on the ratio of nitrogen to silicon, that is, the worth of x. When the value of x adjustments, the physical and chemical homes of silicon nitride will also change. Silicon nitride does come in several kinds, consisting of Si3N4, Si2N2, SiN, and so on
Si3N4 is a crystalline product, which means that its silicon and nitrogen ratio is repaired. When the value of x is equal to 4/3, SiNx is equal to Si3N4. Nonetheless, in functional applications, SiNx is often non-uniform, and its silicon and nitrogen ratio can be regulated by transforming the specifications of the PVD or CVD procedure.
Silicon nitride has excellent insulation residential properties, and its resistivity can be as high as 10 ^ 14 Ω · cm, much surpassing some common shielding products such as silicon oxide (SiO2). Its low dielectric constant makes it a perfect seclusion layer in microwave and RF applications. The silicon nitride layer also contributes in obstructing the diffusion of pollutants in the chip. It can protect against dopants such as boron and phosphorus from changing gadget features with diffusion. In addition, it can additionally avoid the diffusion of steel ions to prevent mistakes such as short circuits.
The exceptional thermal security of silicon nitride is determined by its unique chemical buildings and crystal structure. It can stay secure in a high-temperature setting without chemical decay or physical shape adjustments like other materials. That's because in the crystal structure of silicon nitride, each silicon atom is integrated with four nitrogen atoms in the form of a tetrahedron, and each nitrogen atom is also integrated with four silicon atoms in the type of a tetrahedron. This structure makes the crystal latticework of silicon nitride exceptionally stable and hard to flaw. As a result, it is made use of as a gate-insulating layer when manufacturing high electron wheelchair transistors (HEMTs).
Much better thermal stability, more difficult hardness, and harder to engrave.
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